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  <Article>
    <Journal>
      <PublisherName>ijesm</PublisherName>
      <JournalTitle>International Journal of Engineering, Science and</JournalTitle>
      <PISSN>I</PISSN>
      <EISSN>S</EISSN>
      <Volume-Issue>Volume 6, Issue 6</Volume-Issue>
      <PartNumber/>
      <IssueTopic>Multidisciplinary</IssueTopic>
      <IssueLanguage>English</IssueLanguage>
      <Season>October 2017</Season>
      <SpecialIssue>N</SpecialIssue>
      <SupplementaryIssue>N</SupplementaryIssue>
      <IssueOA>Y</IssueOA>
      <PubDate>
        <Year>2017</Year>
        <Month>10</Month>
        <Day>22</Day>
      </PubDate>
      <ArticleType>Engineering, Science and Mathematics</ArticleType>
      <ArticleTitle>Bond Hardness and Mechanical Properties of ANB8-N Semiconductors and their Alloys</ArticleTitle>
      <SubTitle/>
      <ArticleLanguage>English</ArticleLanguage>
      <ArticleOA>Y</ArticleOA>
      <FirstPage>357</FirstPage>
      <LastPage>388</LastPage>
      <AuthorList>
        <Author>
          <FirstName>Mritunjai Kr. Pathak*</FirstName>
          <LastName/>
          <AuthorLanguage>English</AuthorLanguage>
          <Affiliation/>
          <CorrespondingAuthor>N</CorrespondingAuthor>
          <ORCID/>
          <FirstName>Madhu Sudan Dutta**  Rakesh Kr. Ranjan*** and  Parmanand</FirstName>
          <LastName>Mahto****</LastName>
          <AuthorLanguage>English</AuthorLanguage>
          <Affiliation/>
          <CorrespondingAuthor>Y</CorrespondingAuthor>
          <ORCID/>
        </Author>
      </AuthorList>
      <DOI/>
      <Abstract>In this paper a linear relation H= (0.199 – 0.037__ampersandsignlambda;1.940) B – ( 7.754 – 1.706__ampersandsignlambda;1.746) where B is the bulk modulus and __ampersandsignlambda; is a parameter which is the average difference of group numbers of the constituent atoms (in the periodic table ) of the compounds is proposed for microhardness of ANB8-N ( N = 2, 3, 4 ) semiconductors. This equation has been obtained through the linear relations proposed for microhardness and bulk modulus in terms of bond hardness. Estimated values of B for group- IV, IV-IV, II-VI and III-V semiconductors are in closer agreement with the experimental and reported values. Microhardness of Sn, SiC, GeC, SnC, SiGe, SiSn, GeSn, BSb and CdO has been reported for the first time.</Abstract>
      <AbstractLanguage>English</AbstractLanguage>
      <Keywords>(semiconductors; structural properties; microhardness; bulk modulus.)</Keywords>
      <URLs>
        <Abstract>https://ijesm.co.in/ubijournal-v1copy/journals/abstract.php?article_id=5627&amp;title=Bond Hardness and Mechanical Properties of ANB8-N Semiconductors and their Alloys</Abstract>
      </URLs>
      <References>
        <ReferencesarticleTitle>References</ReferencesarticleTitle>
        <ReferencesfirstPage>16</ReferencesfirstPage>
        <ReferenceslastPage>19</ReferenceslastPage>
        <References/>
      </References>
    </Journal>
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