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  <Article>
    <Journal>
      <PublisherName>ijesm</PublisherName>
      <JournalTitle>International Journal of Engineering, Science and</JournalTitle>
      <PISSN>I</PISSN>
      <EISSN>S</EISSN>
      <Volume-Issue>Volume 7, Issue 4 (3) </Volume-Issue>
      <PartNumber/>
      <IssueTopic>Multidisciplinary</IssueTopic>
      <IssueLanguage>English</IssueLanguage>
      <Season>April 2018 (Special Issue FBSA)</Season>
      <SpecialIssue>N</SpecialIssue>
      <SupplementaryIssue>N</SupplementaryIssue>
      <IssueOA>Y</IssueOA>
      <PubDate>
        <Year>-0001</Year>
        <Month>11</Month>
        <Day>30</Day>
      </PubDate>
      <ArticleType>Engineering, Science and Mathematics</ArticleType>
      <ArticleTitle>Origin of Hysteresis in Zinc Oxide Based Metal Oxide Semiconductor Films</ArticleTitle>
      <SubTitle/>
      <ArticleLanguage>English</ArticleLanguage>
      <ArticleOA>Y</ArticleOA>
      <FirstPage>17</FirstPage>
      <LastPage>27</LastPage>
      <AuthorList>
        <Author>
          <FirstName>S. K.</FirstName>
          <LastName>Nandi</LastName>
          <AuthorLanguage>English</AuthorLanguage>
          <Affiliation/>
          <CorrespondingAuthor>N</CorrespondingAuthor>
          <ORCID/>
        </Author>
      </AuthorList>
      <DOI/>
      <Abstract>Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Interfacing of oxide and semiconductor materials provides a means of coupling unique properties associated with oxide materials to high performance semiconductor devices. To function at low biases to minimize power consumption, such devices must also contain a high-mobility semiconductor and/or a high-capacitance gate oxide. In this work we ovserve the crystal quality and composition of the deposited films with atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) and electrical properties of SiO2/ZnO heterostructure, where SiO2 is used as oxide. Metal-Oxide-Semiconductor structures demonstrate hysteresis characteristic. The metal-SiO2-ZnO capacitor structures demonstrate a characteristic metal-insulator-semiconductor capacitance-voltage (C-V) behaviour with a hysteretic memory window of approximately 0.12 V. The appearance of a broad hysteresis and the significant shift in the flatband voltage indicate the presence of a large number of trapped charges at the interfaces.</Abstract>
      <AbstractLanguage>English</AbstractLanguage>
      <Keywords>Zinc Oxide; Metal Oxide Semiconductor; XPS; RBS; SEM.</Keywords>
      <URLs>
        <Abstract>https://ijesm.co.in/ubijournal-v1copy/journals/abstract.php?article_id=5417&amp;title=Origin of Hysteresis in Zinc Oxide Based Metal Oxide Semiconductor Films</Abstract>
      </URLs>
      <References>
        <ReferencesarticleTitle>References</ReferencesarticleTitle>
        <ReferencesfirstPage>16</ReferencesfirstPage>
        <ReferenceslastPage>19</ReferenceslastPage>
        <References/>
      </References>
    </Journal>
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