INTERNATIONAL JOURNAL OF ENGINEERING, SCIENCE AND - Volume 6, Issue 6, October 2017
Pages: 357-388
Date of Publication: 22-Oct-2017
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Bond Hardness and Mechanical Properties of ANB8-N Semiconductors and their Alloys
Author: Mritunjai Kr. Pathak* , Madhu Sudan Dutta** Rakesh Kr. Ranjan*** and Parmanand Mahto****
Category: Engineering, Science and Mathematics
Abstract:
In this paper a linear relation H= (0.199 – 0.037λ1.940) B – ( 7.754 – 1.706λ1.746) where B is the bulk modulus and λ is a parameter which is the average difference of group numbers of the constituent atoms (in the periodic table ) of the compounds is proposed for microhardness of ANB8-N ( N = 2, 3, 4 ) semiconductors. This equation has been obtained through the linear relations proposed for microhardness and bulk modulus in terms of bond hardness. Estimated values of B for group- IV, IV-IV, II-VI and III-V semiconductors are in closer agreement with the experimental and reported values. Microhardness of Sn, SiC, GeC, SnC, SiGe, SiSn, GeSn, BSb and CdO has been reported for the first time.
Keywords: (semiconductors; structural properties; microhardness; bulk modulus.)
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